Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

By Borong Hu, J. Ortiz Gonzalez, L. Ran, Hai Ren, Zheng Zeng, Wei Lai, B. Gao, O. Alatise, Hua Lu, C. Bailey and 1 more. IEEE transactions on device and materials reliability, 2017

168 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/50e1f31c3bd1a971a846b854b856aa2acbab6707

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Huai Wang
2. Frede Blaabjerg
3. Xiongfei Wang
4. Marco Liserre
5. Ke Ma
6. Friedrich Wilhelm Fuchs
7. Yun Wei Li
8. Poh Chiang Loh

In Mechanical Engineering

1. Frede Blaabjerg
2. Huai Wang

Citations in the corpus

• Power Electronics Reliability: State of the Art and Outlook (2021, methodology): “SiC MOSFETs has been reported to be lower than IGBTs with the same current rating and package technology in [25] by testing and in [26] by simulation.”