Gate Oxide Degradation of SiC MOSFET in Switching Conditions

By R. Ouaida, M. Berthou, J. Leon, X. Perpiñà, Sebastien Oge, P. Brosselard, C. Joubert. IEEE Electron Device Letters, 2014

135 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8b6dcb6f180258495e7bff2829c346684fca47c0