Characterization, Modeling, and Application of 10-kV SiC MOSFET
By Jun Wang, Tiefu Zhao, Jun Li, Alex Q. Huang, R. Callanan, F. Husna, Anant K. Agarwal. IEEE Transactions on Electron Devices, 2008
364 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/08e0fa230f50e7651df015667ada05111651a583
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In Electrical and Electronic Engineering
- Leon M. Tolbert
- Zheng Chen
- Fei Fred Wang
- Shuo Wang
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- John N. Chiasson
Citations in the corpus
- Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, methodology): “Several researchers modeled HV SiC devices [12], [32].”
- Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices (2009, methodology): “Some papers model CGD to be dependent on VGD [7][9][23], while some other works and most datasheets express CGD as a function of VDS.”
- Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters (2015, methodology): “The 15 kV SiC IGBT and other similar MV SiC devices like the 10 kV SiC MOSFET result in highly efficient operation even when hard switched at relatively higher switching frequencies [6], [18].”
- 15 kV SiC MOSFET: An enabling technology for medium voltage solid state transformers (2017, neutral): “SiC IGBT/ETO) conduction mechanisms [15]-[18].”
- The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET (2015, methodology): “In contrast to the Si MOSFET with similar power capacity, SiC power MOSFET shows lower ON-resistance, higher switching frequency and higher operating temperature [10], [11], hence, it is quite suitable for medium or high-power applications with the requirements of high frequency, high-power density,”
- Modeling and Analysis of SiC MOSFET Switching Oscillations (2016, background): “SiC MOSFETs, arguably the most popular WBG power devices today, have been extensively investigated for fast-switching power converters [4], [5].”