RF performance of top-gated, zero-bandgap graphene field-effect transistors

By I. Meric, Natalia Baklitskaya, Philip Kim, K. Shepard. 2008 IEEE International Electron Devices Meeting, 2008

137 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/79026777f169b95b878653c3289bcaba659e5745

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Tomás Palacios
2. Yu-ming Lin
3. Jing Kong
4. Phaedon Avouris
5. Frank Schwierz
6. Joerg Appenzeller

In Materials Chemistry

1. Frank Schwierz
2. Phaedon Avouris
3. Yu-ming Lin
4. Tomás Palacios
5. Jing Kong
6. Joerg Appenzeller
7. A. Di Bartolomeo
8. K. Novoselov

Citations in the corpus

• Graphene-Based Ambipolar RF Mixers (2010, background): “[3] demonstrated that graphene devices can exhibit current gain in the microwave frequency.”
• Graphene Transistors: Status, Prospects, and Problems (2013, background): “The first graphene MOSFET with a cutoff frequency fT in the gigahertz range has been reported in late 2008 [85].”
• Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz (2009, background): “Recently, cutoff frequencies in the gigahertz regime have been demonstrated in top-gated graphene transistors built on exfoliated single-layer graphene sheets [3], [4] and few-layer graphene grown on SiC substrates [5].”