Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz

By Yu-ming Lin, Hsin-Ying Chiu, K. Jenkins, D. Farmer, Phaedon Avouris, A. Valdes-Garcia. IEEE Electron Device Letters, 2009

146 citations recorded by the source corpus.

A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/V · s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a0f5486492f16321efb7fe39666a4e585e661e4d

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In Materials Chemistry

1. P. Jarillo-Herrero
2. Wen-Yan Yin
3. Jun Hu
4. Jiang-Peng Cui
5. T. Taychatanapat
6. Wensheng Zhao

Citations in the corpus

• BN/Graphene/BN Transistors for RF Applications (2011, background): “these un-gated regions can be reduced through electrostatically doping them by biasing the substrate. This reduction in the resistances significantly increases the frequency performance of the device [14]. For example, Figure 4(b) shows that when the substrate is biased at -30 V, the current gain cu”
• Signal Transmission Analysis of Multilayer Graphene Nano-Ribbon (MLGNR) Interconnects (2012, background): “To date, a lot of research efforts have been pursed on the graphene-built field effect transistor [8]–[11] and fully integrated graphene and carbon nanotube (CNT) interconnects for gigahertz high-speed CMOS electronics [12], [13].”