Brillouin zone and band structure of β‐Ga2O3
By H. Peelaers, C. G. Van de Walle. 2015
300 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/6b708c6adbb02750b817601776c4f49189fc5253
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “28 m0 [48]–[52] (here m0 is the free electron mass), while the hole effective mass is rather large due to the relative flatness of the valence band for β-Ga2O3 in momentum space [48], [52], indicating an extremely low hole mobility.”