Analytical loss model of power MOSFET

By Yuancheng Ren, Ming Xu, Jinghai Zhou, Fred C. Lee. IEEE transactions on power electronics, 2006

540 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/69bd231dfa8f4fb88090ce5b0f1d3701b765bf72

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Qiang Li
2. Fred C. Lee
3. Zhengyang Liu
4. Xiucheng Huang
5. Paresh C. Sen
6. Yali Xiong
7. Shuo Wang
8. Boyi Zhang

Citations in the corpus

• Comparison of a Buck Converter and a Series Capacitor Buck Converter for High-Frequency, High-Conversion-Ratio Voltage Regulators (2016, background): “More detailed switching loss models can be applied for greater accuracy if desired [22], [23].”
• High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTs (2014, background): “It is well known that several other factors contribute to device switching losses [25], [26].”
• The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET (2015, background): “This nonlinear characteristic has been studied in many publications for both Si and SiC devices [12], [15]–[17].”
• Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance (2013, methodology): “They may either be too complicated to directly exhibit the effect of the parasitic elements in the expressions [12]–[14], or neglect”
• Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT (2014, background): “These models can reveal detailed characteristics of the device [18], but the simulation is very time consuming [19].”
• New Physical Insights on Power MOSFET Switching Losses (2009, background): “... a new transition voltage parameter VX and a corresponding new switching gate charge parameter Q ∗ be specified in all power MOSFET datasheets to facilitate a more accurate estimation on switchingtimesandpowerlossesofpowerMOSFETs.Itshould be pointed out that this study did not take into considera”
• Analytical loss model of high voltage GaN HEMT in cascode configuration (2014, background): “More comprehensive analytical loss models for voltage source drive are presented in [11]-[12], and models for current source drive are presented in [13]-[14].”
• A Practical Switching Loss Model for Buck Voltage Regulators (2009, background): “The main drawback of the models in [2]–[4] is their complexity.”
• Practical Design and Implementation Procedure of an Interleaved Boost Converter Using SiC Diodes for PV Applications (2012, methodology): “Based on the data extracted from the semiconductors, the conduction losses and switching losses of a switching cell operating in a system can be estimated [19], [20].”
• An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model (2010, background): “Several detailed models that include such parasitics have already been proposed, including either a fully analytical treatment [3], [4] or a more empirical approach [5].”
• Evaluation and Application of 600 V GaN HEMT in Cascode Structure (2014, background): “nanohenry-level inductance switching performance [18]–[20].”