The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

By Kainan Chen, Zhengming Zhao, Liqiang Yuan, T. Lu, F. He. IEEE Transactions on Electron Devices, 2015

156 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b3ddd3d1c874050bf2c7ab770540a7f3e503a2cb

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In Electrical and Electronic Engineering

1. Leon M. Tolbert
2. Fei Fred Wang
3. Zhong Du
4. Keith McKenzie
5. John N. Chiasson

Citations in the corpus

• Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “These studies focus on MOSFET channel [24], base region [25], [26], parasitic capacitance [27], interaction with external circuits [28], [29], and parameter extraction [30], [31].”