New Physical Insights on Power MOSFET Switching Losses

By Yali Xiong, Sha Sun, H. Jia, P. Shea, Z. J. Shen. IEEE transactions on power electronics, 2009

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Practical Design and Implementation Procedure of an Interleaved Boost Converter Using SiC Diodes for PV Applications (2012, methodology): “Based on the data extracted from the semiconductors, the conduction losses and switching losses of a switching cell operating in a system can be estimated [19], [20].”
A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI (2018, background): “The overlap loss is roughly proportional to the duration of current rise time and voltage fall time [27].”
An Optimized Transformerless Photovoltaic Grid-Connected Inverter (2011, background): “Estimation of power device losses is critical for predicting the maximum efficiency of power electronic circuits [18]–[20].”
An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model (2010, background): “Furthermore, as stated in [11], there is no need to include the rather arbitrary output capacitance loss term, (1)2 CdsV 2 in .”