Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT

By Zhengyang Liu, Xiucheng Huang, Fred C. Lee, Qiang Li. IEEE transactions on power electronics, 2014

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COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters (2018, methodology): “We tested the PQFN package, as this lowerinductance package will be preferred at HF/VHF, but the model, the development of which is detailed in [33], uses the package characteristics of a larger TO-220 package.”
Design of GaN-based MHz totem-pole PFC rectifier (2015, methodology): “[2] Liang Zhou, and YiFeng Wu, “99% Ef Totem-Pole PFC Based on GaN HEMT http://www.transphormusa.com/sites/d tem-pole%20paper_0.pdf [3] GaN Systems, application note, “Tot GaN prototype and (b) topology single phase efficiency IONS l-phase interleaved CRM onstrated in this paper. entified and tackle”
Evaluation and Application of 600 V GaN HEMT in Cascode Structure (2014, methodology): “and develop a 600 V cascode GaN HEMT SPICE simulation model [17].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, background): “For the packaging of discrete devices, [62]–[66] proposed”
High-Frequency High-Efficiency GaN-Based Interleaved CRM Bidirectional Buck/Boost Converter with Inverse Coupled Inductor (2016, background): “[12]–[14] have thoroughly illustrated the switching loss mechanism in a”