Group‐III Sesquioxides: Growth, Physical Properties and Devices
By H. von Wenckstern. 2017
186 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5ef78dfd6d9c28efe6e6ab3c16553e3a54cc3ef2
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “28 m0 [48]–[52] (here m0 is the free electron mass), while the hole effective mass is rather large due to the relative flatness of the valence band for β-Ga2O3 in momentum space [48], [52], indicating an extremely low hole mobility.”