Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters
By Laurent Dupont, Yvan Avenas, Pierre-Olivier Jeannin. IEEE transactions on industry applications, 2013
211 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/56c0abe705da276f8df2fd0e1a0e8025c96e3d35
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In Electrical and Electronic Engineering
- Wuhua Li
- Xiangning He
- Marco Liserre
- Zoubir Khatir
- Francesco Iannuzzo
- S. Munk‐Nielsen
- Nick Baker
- Yvan Avenas
Citations in the corpus
- Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review (2012, methodology): “2) Measurement of the Threshold Voltage: The threshold voltage Vth is used to evaluate the temperature of MOSFET [41], [42] and IGBT [19], [29], [37], [39], [43], [44].”
- Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules (2016, methodology): “era is representative of an optical-based method, but is expensive and restricted in practical applications [14].”
- IGBT Junction Temperature Measurement via Peak Gate Current (2016, background): “thermally stressed in the case of two paralleled chips [11]–[13].”