Design and Optimization of a 380–12 V High-Frequency, High-Current LLC Converter With GaN Devices and Planar Matrix Transformers
By Mingkai Mu, Fred C. Lee. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016
180 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6490152c37db32d2975fd1a9c70de420317b48c2
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- High-Frequency Three-Phase Interleaved LLC Resonant Converter With GaN Devices and Integrated Planar Magnetics (2019, methodology): “Further efforts have been made to use a simple four-layer PCB winding to replace conventional 12-layer PCB winding, and integrate SRs and output capacitors into the secondary winding [28][29].”
- LLC resonant converter topologies and industrial applications — A review (2020, background): “The GaN device has a small on-voltage threshold range, fast switching, no reverse recovery loss, low on-resistance, and good high-frequency characteristics, and is able to switch voltage of hundreds of volts in a few nanoseconds([55-57]), which can replace siliconbased equipment even in high-frequen”
- High-Frequency PCB Winding Transformer With Integrated Inductors for a Bi-Directional Resonant Converter (2019, methodology): “In [5], [6], and [11], a matrix transformer concept is proposed.”