Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

By D. McMorrow, W. Lotshaw, J. Melinger, S. Buchner, R. Pease. 2002

261 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4c4bb2f31cd09d9092f67e94baa74ac7e616a71b

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In Electrical and Electronic Engineering

1. D. Fleetwood
2. Lloyd W. Massengill
3. K. Warren
4. R. Lacoe

Citations in the corpus

• Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, background): “This enables the generated carrier dynamics to be investigated in regions topped with metal layers, where topside laser testing is not possible since the metal layers block the laser light [83].”
• The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM (2005, unknown): “The two-photon absorption technique permits carrier injection through the wafer in a flip-chip mounted device [13]–[15].”
• Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design (2005, background): “The two-photon absorption technique discussed in detail in [12], [13] allows one to identify regions of a circuit that are sensitive to single event upset.”