Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

By O. Mitrofanov, Michael Manfra. 2003

154 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/40532139b1958ebb0b0a1a4b3cd6b229cc36c922

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In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Alessandro Chini
5. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Alessandro Chini

In Electronic, Optical and Magnetic Materials

1. Matteo Meneghini
2. Enrico Zanoni
3. Gaudenzio Meneghesso
4. Alessandro Chini

Citations in the corpus

• Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, background): “structure [23]; and 5) trapping/de-trapping kinetics are not governed by thermal emission, but by other mechanisms such as hopping or trap-assisted-tunneling [19], [26].”