Fast growth rate of epitaxial β-Ga 2 O 3 by close coupled showerhead MOCVD

By F. Alema, B. Hertog, A. Osinsky, P. Mukhopadhyay, M. Toporkov, W. Schoenfeld. 2017

137 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/3e383b252c274d31436f7b2b88ceb76c5d04a597

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In Electronic, Optical and Magnetic Materials

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Materials Chemistry

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Renewable Energy, Sustainability and the Environment

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “between growth rate of epitaxial β-Ga2O3 and different Ga sources [Ga(DPM)3 (DPM = dipivaloylmethanate), TEGa, and trimethylgallium (TMGa)] were also studied [83], which the highest growth rate of 10 μm/h has been achieved using a TMGa precursor at a Tg of 900 °C.”