Fabrication and analysis of deep submicron strained-Si n-MOSFET's

By A M Kern, K. Rim, J. Hoyt, J. F. Gibbons. 2000

358 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3d9b8218ba8454bb431c75790e27fe03dc83c868

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In Electrical and Electronic Engineering

1. Jing Guo
2. Mark S. Lundstrom
3. Anisur Rahman
4. Supriyo Datta
5. Avik W. Ghosh
6. Dmitri E. Nikonov
7. K. Rumpf
8. P. Granitzer

Citations in the corpus

• Nanoscale Transistors: Device Physics, Modeling and Simulation (2005, background): “SiGe) or strain silicon shows promise for increasing mobility [20].”
• On the mobility versus drain current relation for a nanoscale MOSFET (2001, background): “, strained Si [8]), so the question of exactly how the short-channel drain current is related to the long-channel mobility is an important one.”
• Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates (2001, background): “For example, it has been shown that enhanced carrier transport makes strained Si on relaxed SiGe a promising candidate for improving the performance of CMOS technology [ 1 ].”