Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

By Zhi-Yuan Cheng, M. Currie, C. Leitz, G. Taraschi, Eugene A. Fitzgerald, J. Hoyt, Dimitri A. Antoniadas. IEEE Electron Device Letters, 2001

151 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d61888bb72e54c1c4530630bc8f80bff33715884

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Citations in the corpus

• Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm (2010, background): “For comparison, the universal and field-effect mobilities of Si n-MOSFETs [11] and strained Si n-MOSFETs on SiGe-on-oxide [12] are shown.”