On the go with SONOS

By M. White, D. Adams, J. Bu. 2000

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Phase change memory technology (2010, background): “Many alternative cell designs were proposed, typically involving replacement of the floating polysilicon gate by some type of charge-trapping layer, such as the Silicon Nitride at the center of the Silicon-Oxide-Nitride-Oxide-Semiconductor (SONOS) cell structure[11].”
Radiation effects and hardening of MOS technology: devices and circuits (2003, methodology): “Except for niche applications, like radiation-hardened cryogenic MOS [244] and nonvolatile memory [245] (where dual dielectric films of silicon nitride over silicon dioxide are used), nearly all generations of MOS technology use silicon dioxide gate dielectric films.”
BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability (2005, background): “Nitride-trapping device consists of two main types: SONOS [1] which uses channel program/erase, and NROM [2] which store charges locally.”
Overview of emerging nonvolatile memory technologies (2014, background): “In order to solve the scaling issue of the FG memory, the SONOS memory has been proposed as a Flash technology since the 1980s [68,69].”
Overview of candidate device technologies for storage-class memory (2008, background): “One obvious alternative is to replace the floating gate with a chargetrapping layer, such as the silicon nitride in the SONOS cell structure [19].”