Substrates for gallium nitride epitaxy

By L. Liu, J. Edgar. 2002

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Room temperature coherent control of defect spin qubits in silicon carbide (2011, background): “; and its common use as a growth substrate for other technologically relevant materials, such as gallium nitride and graphen”
Prediction of lattice constant in cubic perovskites (2006, background): “As one of the most abundant and widely investigated minerals, perovskite compounds are selected for this study, partly influenced by a recent success [1,6] of fabricating”
Research challenges to ultra‐efficient inorganic solid‐state lighting (2007, background): “As mentioned above, native GaN substrates are not yet widely available [53].”
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “Tremendous efforts have been devoted to the epitaxial growth aiming at managing the relatively large mismatch of lattice constant (∼17%) and thermal expansion coefficient (∼54%) between (0001) GaN and (111) Si [9], [10].”