Room temperature coherent control of defect spin qubits in silicon carbide
By W. Koehl, B. Buckley, F. Heremans, G. Calusine, David D. Awschalom. Nature, 2011
781 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/421827cfceb06ca02c0114a02211b8902181ef1b
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In Electrical and Electronic Engineering
In Materials Chemistry
- Stefania Castelletto
- V. Jacques
- Audrius Alkauskas
- Jean‐Philippe Tetienne
- L. Rondin
- B. Buckley
- David D. Awschalom
- C. G. Van de Walle
In Mechanics of Materials
Citations in the corpus
- Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface (2017, positive): “Divacancy defects in SiC have long-lived electronic spin-triplet ground states that can be polarized and detected using light [12,15,16], similar to NV centers in diamond.”
- Silicon carbide color centers for quantum applications (2020, background): “[69], [84], ions [53], [109], neutrons [78], proton irradiation [110]], and focused Si ion beams [111] with subsequent”
- First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres (2014, background): “In addition, if the theory is predictive, it can be applied to other defects, for example alternative systems that are currently being actively considered for quantum information and metrology applications [21, 22, 23, 24], or defects that play an important role in light-emitting diodes [25, 26].”
- Magnetic-field-dependent photodynamics of single NV defects in diamond: an application to qualitative all-optical magnetic imaging (2012, methodology): “We note that this method could be used with any solid-state emitter exhibiting spin-dependent PL [34], with a characteristic magnetic field range given by its zero-field splitting (equation (1)).”