SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

By Jürgen Biela, Mario Schweizer, S. Waffler, J. W. Kolar. IEEE transactions on industrial electronics (1982. Print), 2011

825 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1f2ea8e6a69c96a1cef040f43c11235f3596e33d

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In Electrical and Electronic Engineering

Citations in the corpus

The Benefits of SiC mosfets in a T-Type Inverter for Grid-Tie Applications (2017, background): “Of course the loss reduction advantages in principle of SiC devices compared to Si devices are already well established [15]–[26], but their benefit in the context of a T-type inverter is not so clear-cut.”
A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices (2014, background): “4– 5 kV) isolated dc–dc converters [11] as has been theorized in”
Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors (2014, background): “The small die size of these devices results in support for very fast switching: SiC vertical channel JFETs were recently reported to switch 20 A at 600 V at speeds of greater than 30 V/ns [32]; GaN HFETs were recently reported to switch 20 A at 350 V at speeds of 80 V/ns [7].”
Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated (2012, background): “In the case of the available Si devices for voltage ratings above 600 V, such high switching frequencies can be only reached when soft switching is employed [24].”
An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations (2014, background): “Furthermore, it is noted in [5] that it is often necessary to reduce the switching dv/dt of IGBT-based inverters to avoid detrimental effects on the load machine.”
Comprehensive Topological Overview of Rolling Stock Architectures and Recent Trends in Electric Railway Traction Systems (2017, background): “filter and HF transformer due to capability to operate at higher switching frequencies [136], [139].”
High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications (2016, background): “Whereas, the medium and high voltage category includes MOSFETs of 10, 15 kV and higher blocking capabilities [7]–[10].”
Wind Energy Systems (2017, background): “In addition to silicon-based power devices, SiC devices, which have better switching characteristics and higher voltage-blocking capability, are a promising technology for future wind power systems [75], [76].”
Review and analysis of SiC MOSFETs’ ruggedness and reliability (2020, background): “Silicon carbide (SiC) power metal-oxide semiconductor field-effect transistors (MOSFETs) are the centre of attention for mediumvoltage wide bandgap (WBG) device development to displace silicon insulated gate bipolar transistors (IGBTs) in recent years because they can enable power converter designs ”
Modeling and Analysis of SiC MOSFET Switching Oscillations (2016, background): “W IDE-BANDGAP (WBG) semiconductor devices can operate at high voltage, high temperature, and high switching frequency [1]–[3].”