The Benefits of SiC mosfets in a T-Type Inverter for Grid-Tie Applications
By Alexander Anthon, Zhe Zhang, Michael A. E. Andersen, D. G. Holmes, Brendan McGrath, C. Teixeira. IEEE transactions on power electronics, 2017
184 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/95909d71faff24360d503ae22fe7939d73f92479
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In Electrical and Electronic Engineering
Citations in the corpus
- A Megawatt-Scale Medium-Voltage High Efficiency High Power Density “SiC+Si” Hybrid Three-Level ANPC Inverter for Aircraft Hybrid-Electric Propulsion Systems (2018, background): “References [6]-[8] demonstrated the performance of SiC three-level power converters, but those converters are based on discrete SiC devices with relatively low power ratings, in which very low loop inductance in all commutation loops are achievable.”
- An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages (2018, methodology): “According to the comparison, the T2C is more favorable in applications that require lower switching frequency, while NPC inverters become more advantageous at the higher switching frequency.”