Modeling and Analysis of SiC MOSFET Switching Oscillations

By Tianjiao Liu, Runtao Ning, T.T.Y. Wong, Z. Shen. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016

235 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules (2019, methodology): “observed in many SiC device studies [10]–[13].”
Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “These studies focus on MOSFET channel [24], base region [25], [26], parasitic capacitance [27], interaction with external circuits [28], [29], and parameter extraction [30], [31].”
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, methodology): “An analytical treatment of selfsustained oscillations in WBG device based circuits is provided in [29].”
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices (2020, methodology): “The use of RC snubbers was analyzed in [15], [24], [25], and [93].”