Michael A. Reshchikov

Materials Chemistry · 2000–2021

A researcher in the Science corpus: 7 papers; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 192 citations into it
• Electronic, Optical and Magnetic Materials — 118 citations into it
• Condensed Matter Physics — 70 citations into it

Whom Michael A. Reshchikov trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Matthew D. McCluskey
2. Hadis Morkoç
3. C. Walle
4. J. L. Lyons
5. Audrius Alkauskas
6. A. Janotti
7. S. Lany
8. Q. Yan

Who trusts Michael A. Reshchikov overall

1. Audrius Alkauskas
2. F. Tuomisto
3. Yanan Zou
4. A. Polyakov

Papers from Michael A. Reshchikov's perspective

Ordered by how strongly the researchers Michael A. Reshchikov trusts endorse each paper. Same corpus, a different order for every researcher.

1. I and J
2. Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics
3. Ultralong spin coherence time in isotopically engineered diamond. (Nature Materials)
4. III-Nitride Ultraviolet Emitters: Technology and Applications
5. Electronic and Optoelectronic Properties of Semiconductor Structures
6. Challenges for semiconductor spintronics
7. Luminescence properties of defects in GaN
8. Semiconductor Device Physics and Design
9. Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide (Science)
10. Properties of nitrogen-vacancy centers in diamond: the group theoretic approach

Their papers

• A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES (2005) — 10,910 citations
• Measurement and analysis of photoluminescence in GaN (2021) — 149 citations
• Carbon defects as sources of the green and yellow luminescence bands in undoped GaN (2014) — 155 citations
• Luminescence properties of defects in ZnO (2007) — 178 citations
• Luminescence properties of defects in GaN (2005) — 1,840 citations
• Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films (2001) — 163 citations
• Dislocation density in GaN determined by photoelectrochemical and hot-wet etching (2000) — 133 citations