Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
By P. Visconti, K. M. Jones, Michael A. Reshchikov, Roberto Cingolani, Hadis Morkoç, R. Molnar. 2000
133 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c4d2d4bb66a1cb2ce37890fb0667b4e6d214e61c
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- M. Rais-Zadeh
- D. Théron
- Y. Cordier
- L. Buchaillot
- A. Ansari
- M. Faucher
- V. Gokhale
Citations in the corpus
- Gallium Nitride as an Electromechanical Material (2014, background): “No significant etching was observed for temperatures lower than 160 °C [81], [82].”