Luminescence properties of defects in GaN

By Michael A. Reshchikov, Hadis Morkoç. 2005

1,840 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/847634f297d7738df5d0150cbd1d545ff9548496

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Audrius Alkauskas
2. Ya. I. Alivov
3. Ilja Makkonen
4. Hadis Morkoç
5. Natalia Izyumskaya
6. C. G. Van de Walle
7. F. Tuomisto

In Electronic, Optical and Magnetic Materials

1. Hadis Morkoç
2. Ya. I. Alivov
3. Natalia Izyumskaya
4. Haoshuang Gu
5. C. G. Van de Walle
6. Yongming Hu
7. Yanan Zou

In Mechanics of Materials

1. Ilja Makkonen
2. C. G. Van de Walle
3. F. Tuomisto

Citations in the corpus

• First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres (2014, background): “The success of the computational methodology developed here provides confidence that it can be fruitfully applied to other systems of high current interest that exhibit a complex vibrational structure of luminescence bands [21–26].”
• Defect identification in semiconductors with positron annihilation: Experiment and theory (2013, background): “…provide detailed information on the electrical and optical properties generated by the defects, but usually they do not allow for direct identification of the defects in question, and in optical spectroscopy the determination of defect concentrations is challenging (Reshchikov and Morkoç, 2005).”