Geoffrey Pourtois
Materials Chemistry · 2001–2017
A researcher in the Science corpus: 11 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 82 citations into it
- Atomic and Molecular Physics, and Optics — 49 citations into it
Whom Geoffrey Pourtois trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Geoffrey Pourtois's perspective
Ordered by how strongly the researchers Geoffrey Pourtois trusts endorse each paper. Same corpus, a different order for every researcher.
- Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials (Science)
- Phonons and related crystal properties from density-functional perturbation theory
- Two- and one-dimensional honeycomb structures of silicon and germanium. (Physical Review Letters)
- Single-layer MoS2 transistors. (Nature Nanotechnology)
- Atomically thin MoS₂: a new direct-gap semiconductor. (Physical Review Letters)
- Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects
- Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction (Journal of Computational Chemistry)
- Emerging photoluminescence in monolayer MoS2. (Nano letters (Print))
- Electronic properties of MoS2 nanoparticles
- Interpretation of Raman spectra of disordered and amorphous carbon
Their papers
- Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 (2011) — 620 citations
- 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation (2011) — 684 citations
- Can silicon behave like graphene? A first-principles study (2010) — 219 citations
- Thickness dependence of the resistivity of platinum-group metal thin films (2017) — 189 citations
- Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight (2014) — 227 citations
- Vibrational properties of silicene and germanene (2012) — 161 citations
- Electronic properties of hydrogenated silicene and germanene (2011) — 411 citations
- High-k dielectrics for future generation memory devices (Invited Paper) (2009) — 234 citations
- Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance (2008) — 255 citations
- Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions (2006) — 267 citations
- Spin-Orbit Coupling and Intersystem Crossing in Conjugated Polymers: A Configuration Interaction Description (2001) — 304 citations