Nonvolatile memory cells based on MoS2/graphene heterostructures.

By Simone Bertolazzi, Daria Krasnozhon, Andras Kis. ACS Nano, 2013

960 citations recorded by the source corpus.

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fdfaf38010c381b7253e4fe044d230866cc22e3a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Mark C. Hersam
2. Yuchen Du
3. Han Liu
4. A. Neal
5. Peide D. Ye
6. Mengwei Si
7. Ken-Tye Yong
8. Di Xiao

In Materials Chemistry

1. Mark C. Hersam
2. Hongwei Zhu
3. Xiao Li
4. Yuchen Du
5. Peide D. Ye
6. Han Liu
7. A. Neal
8. Mengwei Si

Citations in the corpus

• Two-dimensional MoS2: Properties, preparation, and applications (2015, background): “Memory device [53] MoS2 Mechanical exfoliation MoS2-Gr Heterostructure 10 4 difference between memory program and”
• Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances (2013, background): “Chemical sensors, photonic detectors, memories, and integrated circuits have been widely demonstrated on single or few layers MoS2 [17]–[21].”
• Field-effect transistors built from all two-dimensional material components. (2014, methodology): “Gr/MoS2 heterostructures have been used for nonvolatile memory cells.(19) Tunnel transistors fabricated with Gr/hexagonal-BN (h-BN)/Gr and Gr/MoS2/Gr open the prospect of obtaining steep transistors with such an architecture.”
• Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, methodology): “Later demonstrations used graphene as both the contact and floating gate with MoS2 as the channel and ALD-derived alumina as the tunnel barrier.(166) An alternative geometry employed h-BN as a tunnel barrier sandwiched between a MoS2 FET and a graphene floating gate (Figure 7c,d).”