Field-effect transistors built from all two-dimensional material components.

By T. Roy, M. Tosun, Jeong Seuk Kang, A. Sachid, S. Desai, M. Hettick, Chenming Calvin Hu, Ali Javey. ACS Nano, 2014

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Mechanics of freely‐suspended ultrathin layered materials (2014, background): “em showed a very large breaking stress, especially if compared to conventional 3D non-layered materials. This property makes 2D materials prospective candidates to be employed in flexible electronics [96, 97, 98, 99, 100, 101]. For instance, single-layer graphene and MoS 2 have shown very large brea”
Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. (2015, methodology): “The MoS2 flake of interest was dry-transferred onto the targeted local back gate using a previously reported pick and transfer process.(23) The sample was annealed at 180 C for 2min to ensure proper adhesion of the flake to the substrate.”