Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances

By Yuchen Du, Han Liu, A. Neal, Mengwei Si, Peide D. Ye. IEEE Electron Device Letters, 2013

206 citations recorded by the source corpus.

For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors and its potential applications in layer-structured semiconducting 2-D crystals.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/33a6e126467e07ef138dab47049396b7ae77d8da

Citations in the corpus

• Recent Advances in Two-Dimensional Materials beyond Graphene. (2015, unknown): “Du et al.(219) adopted amine-rich polyethylenimine (PEI, Figure 7c) as n-type dopants for multilayer MoS2 FETs and showed that a 2.”