Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides.

By Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, T. Marks, Mark C. Hersam. ACS Nano, 2014

2,504 citations recorded by the source corpus.

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/56021439f38e2554ace9e1307899f3064d73f45b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Dmitri Golberg
2. Yoshio Bando
3. Lijia Pan
4. Zhuo Sun
5. Mark C. Hersam
6. Daiming Tang
7. Hector Ochoa
8. T. Marks

In Materials Chemistry

1. Rui Huang
2. Dmitri Golberg
3. Mark C. Hersam
4. Francisco Guinea
5. Yoshio Bando
6. A. Grushin
7. Teng Zhang
8. Huajian Gao

Citations in the corpus

• Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk (2018, background): “Also, many monolayer TMDs have a direct bandgap, enabling their use in the field of optoelectronics.(11) Structurally, TMDs have strong in-plane covalent bonding and weak out-of-plane van der Waals bonding.”
• Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. (2017, methodology): “We extracted the pinning factor and the CNL, based on equations (2) and (3).”