High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits
By Weisheng Zhao, Claude Chappert, Virgile Javerliac, Jean-Pierre Nozière. IEEE transactions on magnetics, 2009
339 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/099b76e6af900648a91b3cc85a7fe355ee58bac7
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In Atomic and Molecular Physics, and Optics
- Weisheng Zhao
- Jacques-Olivier Klein
- Dafine Ravelosona
- Yue Zhang
- Zhaohao Wang
- Nicolas Locatelli
- Wang Kang
- Claude Chappert
In Electrical and Electronic Engineering
- Weisheng Zhao
- Jacques-Olivier Klein
- Dafine Ravelosona
- Yue Zhang
- Sylvie Galdin-Retailleau
- Nicolas Locatelli
- Damien Querlioz
- Claude Chappert
Citations in the corpus
- Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions (2012, methodology): “One promising method relies on using spin transfer torques (STTs) in MTJs based on CoFeB/MgO, which involve low threshold currents IC0 and well-understood mechanisms for switching [11], [12].”
- Spintronics (2015, methodology): “There are three basic decision-making methods to determine the data value stored in the memory cell: the reference-cell method, complementary-cells comparison method, and self-referenced method [Maffitt et al. 2006; Zhao et al. 2009b; Sun et al. 2012].”
- Spin-transfer torque magnetic memory as a stochastic memristive synapse (2014, background): “Advanced read circuits are sense amplifiers specially designed for STT-MTJs [36], [40].”