Wide-bandgap semiconductor materials: For their full bloom
By S. Fujita. 2015
277 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/eed92cf128fddb3972c05c6dc54373b183fccf53
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Intrinsic and extrinsic doping of ZnO and ZnO alloys (2016, background): “The most challenging hurdle for a prospective use of ZnO as a material for electronic devices is to achieve reliable and stable p-type doping in order to prepare p–n junctions in ZnO [5].”
- The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (2015, unknown): “zinc selenide (ZnSe) [30], [47], [48].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “to ultra-WBG (UWBG) (Eg) semiconductors [4]–[9] [such as gallium oxide (Ga2O3), diamond, and aluminium nitride (AlN)] due to their high Baliga’s figure of merit (BFOM), which defined”