How good can monolayer MoS₂ transistors be?

By Youngki Yoon, K. Ganapathi, Sayeef Salahuddin. Nano letters (Print), 2011

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A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect (2014, background): “Due to the low mean free path (∼15 nm) [19] of carriers in 2D TMD devices, DD equations remain valid even for sub-100 nm channel lengths.”
High performance multilayer MoS2 transistors with scandium contacts. (2013, background): “6 − 12 While graphene shows the highest reported mobility in excess of 100 000 cm 2 /(V s) 13 within this family, the absence of an energy gap in the electronic band structure of graphene paves the way for the exploration of semiconducting 2D materials like MoS 2 14,15 and others.”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “Moreover, MoS2 can potentially outperform conventional 3D semiconductor devices at aggressively scaled channel lengths (LCH < 5 nm) thanks to its excellent electrostatic integrity [122,123], finite band-gap, and preserved carrier mobilities even at sub-nm thickness (monolayer MoS2 thickness ~0.”