Principles of Lithography

By H. Levinson. 2001

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High-NA EUV lithography: current status and outlook for the future (2022, unknown): “…high-NA EUV exposure tools are expected to cost in excess of $300 M. 95) Over many prior generations of exposure tools, the exponential increase in prices was offset by improvements in throughput, 96) and with high capital costs for high-NA EUV tools, throughput will be especially important.”
Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography (2002, methodology): “the illumination wavelength divided by the numerical aperture (NA) of the lens system used [16].”
Lithography and Other Patterning Techniques for Future Electronics (2008, methodology): “Current resists have gamma values exceeding six, so that the aerial image can be of much lower contrast (lower curve) [5] falls off as the lines and spaces shrink.”
Iterative learning control, with applications to a wafer-stage (2004, methodology): “This is done with a process known as micro-lithography [70].”
Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography (2009, background): “features (SRAF), which is a standard procedure in mask design for microelectronics circuits [16].”