Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography
By Wim Bogaerts, Vincent Wiaux, D. Taillaert, S. Beckx, B. Luyssaert, Peter Bienstman, R. Baets. 2002
179 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films
View Paper: https://www.semanticscholar.org/paper/7fd8aae160109ff5279bb637c1cbc198ac754a9e
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In Atomic and Molecular Physics, and Optics
- Wim Bogaerts
- D. van Thourhout
- R. Baets
- Shankar Kumar Selvaraja
- Pieter Dumon
- D. Taillaert
- Peter Bienstman
- J. Van Campenhout
In Electrical and Electronic Engineering
- Wim Bogaerts
- R. Baets
- Shankar Kumar Selvaraja
- D. van Thourhout
- Pieter Dumon
- D. Taillaert
- S. Beckx
- Vincent Wiaux
In Surfaces, Coatings and Films
- Wim Bogaerts
- D. van Thourhout
- Shankar Kumar Selvaraja
- R. Baets
- D. Taillaert
- Pieter Dumon
- Po Dong
- C. Doerr
Citations in the corpus
- Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires (2006, methodology): “The oxide thickness of 1 μm is sufficient to reduce substrate leakage [3].”
- Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography (2009, background): “His works [2], [12], [13] clearly demonstrates the feasibility of CMOS fabrication tools for fabricating photonic integrated circuits.”
- Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography (2004, methodology): “Note that when the wires get closer together, the wire width decreases to 450 nm due to optical proximity effects during lithography [3].”
- Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology (2005, methodology): “First, etching experiments with SOI wafers with a top silicon layer of 205 nm and an oxide of 400 nm are described in [7].”