III-V/Si photonics by die-to-wafer bonding

By Gunther Roelkens, J. Van Campenhout, J. Brouckaert, D. van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kaźmierczak, C. Seassal, X. Letartre and 4 more. 2007

208 citations recorded by the source corpus.

Photonic integrated circuits offer the potential of realizing low-cost, compact optical functions. Silicon-on-insulator (SOI) is a promising material platform for this photonic integration, as one can rely on the massive electronics processing infrastructure to process the optical components. However, the integration of a Si laser is hampered by its indirect bandgap. Here, we present the integration of a direct bandgap III-V epitaxial layer on top of the SOI waveguide layer by means of a die-to-wafer bonding process in order to realize near-infrared laser emission on and coupled to SOI.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/dce5701bffd611bf796df45105adbc9cf616490a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. John E. Bowers
  2. D. van Thourhout
  3. R. Baets
  4. Gunther Roelkens
  5. Di Liang
  6. Martijn J. R. Heck
  7. D. Thomson
  8. Graham T. Reed

In Electrical and Electronic Engineering

  1. John E. Bowers
  2. D. van Thourhout
  3. Di Liang
  4. R. Baets
  5. Gunther Roelkens
  6. D. Thomson
  7. Frederic Y. Gardes
  8. Martijn J. R. Heck

Citations in the corpus