III-V/Si photonics by die-to-wafer bonding
By Gunther Roelkens, J. Van Campenhout, J. Brouckaert, D. van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kaźmierczak, C. Seassal, X. Letartre and 4 more. 2007
208 citations recorded by the source corpus.
Photonic integrated circuits offer the potential of realizing low-cost, compact optical functions. Silicon-on-insulator (SOI) is a promising material platform for this photonic integration, as one can rely on the massive electronics processing infrastructure to process the optical components. However, the integration of a Si laser is hampered by its indirect bandgap. Here, we present the integration of a direct bandgap III-V epitaxial layer on top of the SOI waveguide layer by means of a die-to-wafer bonding process in order to realize near-infrared laser emission on and coupled to SOI.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/dce5701bffd611bf796df45105adbc9cf616490a
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- John E. Bowers
- D. van Thourhout
- R. Baets
- Gunther Roelkens
- Di Liang
- Martijn J. R. Heck
- D. Thomson
- Graham T. Reed
In Electrical and Electronic Engineering
- John E. Bowers
- D. van Thourhout
- Di Liang
- R. Baets
- Gunther Roelkens
- D. Thomson
- Frederic Y. Gardes
- Martijn J. R. Heck
Citations in the corpus
- Hybrid Integrated Platforms for Silicon Photonics (2010, background): “For more detail information on these platforms please see references [5,6].”
- Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS (2011, background): “silicon-based waveguide structures [87], [122]–[128], but it is, in principle, also an attractive approach for MOEMS, MEMS, and NEMS devices.”
- Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler (2012, methodology): “In order to densely integrate the III–V semiconductors with the silicon waveguide circuits, mainly DVS-BCB adhesive wafer bonding and molecular bonding techniques are used and are actively reported in state-of-the-art hybrid lasers [3]–[6].”
- Hybrid Silicon Photonics for Optical Interconnects (2011, background): “, a detector or laser array, a die-bonding approach might be more costeffective [28].”
- Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon (2014, background): “In the seco nd ne described in [7], the mode in the hybrid section is mainly gu ided by the III-V waveguide, and the light is coupl ed from the III-V waveguide to the silicon waveguide through waveguid e tapering.”
- An ultra-small, low-power all-optical flip-flop memory on a silicon chip (2010, methodology): “Concept and fabrication The InP microdisk lasers are heterogeneously integrated onto SOI using adhesive die-to-wafer bonding with the divinylsiloxane-benzocyclobutene (DVS-BCB) polymer [5].”