Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler
By M. Lamponi, S. Keyvaninia, Christophe Jany, F. Poingt, F. Lelarge, G. D. Valicourt, G. Roelkens, D. van Thourhout, S. Messaoudene, J. Fédéli and 1 more. IEEE Photonics Technology Letters, 2012
160 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/33b14ca4c8a571099a98b2f2d92ef5d6ece2c5e3
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Shankar Kumar Selvaraja
- D. van Thourhout
- R. Baets
- Gunther Roelkens
- D. Thomson
- Bart Kuyken
- J. Van Campenhout
- Graham T. Reed
In Electrical and Electronic Engineering
- Shankar Kumar Selvaraja
- D. van Thourhout
- R. Baets
- Gunther Roelkens
- Xia Chen
- Goran Z. Mashanovich
- D. Thomson
- Bart Kuyken
Citations in the corpus
- III-V-on-Silicon Photonic Devices for Optical Communication and Sensing (2015, methodology): “In many of our recently developed laser devices, a double adiabatic tapered coupler has been successfully implemented [7–9].”
- Silicon Photonic Integration Platform—Have We Found the Sweet Spot? (2014, methodology): “other cases, the mode in the active section is largely located in the III–V layers [95], [100].”