Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric
By C. Anghel, Prathyusha Chilagani, A. Amara, A. Vladimirescu. 2010
137 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/d82319776243c36363f6f3d787afa58870c926a3
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Ru Huang
- Abhijit Mallik
- Y. Qiu
- Qianqian Huang
- Runsheng Wang
- Avik Chattopadhyay
- Shubham Sahay
- Mamidala Jagadesh Kumar
Citations in the corpus
- Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor (2011, background): “band lowering results in the formation of depletion zones in the source near the gate edge, as reported in [21].”
- A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET (2014, background): “For example, introducing high-κ dielectric [7] and narrow bandgap materials”