Gallium Nitride Electronics

By R. Quay. 2008

138 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d5e78c00541171889718785b295f366dffdbac88

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Jean-Francois Carlin
2. Giuseppe Greco
3. Fabrizio Roccaforte

In Electrical and Electronic Engineering

1. Giuseppe Greco

Citations in the corpus

• Testing the Temperature Limits of GaN-Based HEMT Devices (2010, background): “A rather comprehensive overview can be found in [11].”
• Recent advances on dielectrics technology for SiC and GaN power devices (2014, background): “Today, silicon carbide (4H-SiC) and gallium nitride (GaN) are lmost unanimously recognized as the best materials for the next eneration of power electronic devices [1–3].”