Recent advances on dielectrics technology for SiC and GaN power devices

By Fabrizio Roccaforte, P. Fiorenza, Giuseppe Greco, M. Vivona, R. Nigro, F. Giannazzo, A. Patti, M. Saggio. 2014

159 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e989ac74cec61fa0d100094c25208220763ed127

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In Electrical and Electronic Engineering

1. S. Munk‐Nielsen
2. Xiongfei Wang
3. Frede Blaabjerg

Citations in the corpus

• Temperature (2019, unknown): “Therefore, the development of power devices using widegap semiconductors, such as SiC and GaN, is expected [5].”
• Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs (2016, background): “not as mature as Si; the manufacturing process and the interface quality remains a material issue [35], [36], although this is being addressed by improving material processing, like nitridaFig.”