Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

By K. Takeuchi, T. Fukai, T. Tsunomura, A. T. Putra, A. Nishida, S. Kamohara, T. Hiramoto. 2007 IEEE International Electron Devices Meeting, 2007

168 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d2a87489b8300c0aac478c0cc4270631767d0765

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Martin D. Giles
2. Kelin J. Kuhn
3. Roza Kotlyar
4. Bevan M. Baas
5. Aaron Stillmaker
6. Qiang Li
7. Kei May Lau

Citations in the corpus

• Process Technology Variation (2011, methodology): “4) Normalization With Tox and Doping Differences: The following two other nomenclatures have also been proposed: 1) BVT and 2) CVT. BVT was suggested by Takeuchi [17] as a way of normalizing out the contribution of the gate oxide thickness as σVT = BVT √ Tinv(VT + 0.”