Micrometre-scale silicon electro-optic modulator

By Qianfan Xu, B. Schmidt, S. Pradhan, Michal Lipson. Nature, 2005

2,373 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ca122aea8ae82fa2bcfec0c2616af2f21f1cc8dd

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Citations in the corpus

The Past, Present, and Future of Silicon Photonics (2006, methodology): “The construction aspects are: a uniform ∼300-nm weak-coupling gap between ring and bus that preserves the ring’s high Q ,as elfassembled lateral superlattice [53] that penetrates the ridge and slab portions of the rib resonator (an hcp lattice with ∼60-nm pore diameter), and a lateral p-i-n diode st”
Silicon Photonics (2006, methodology): “A compact device using a ring resonator (10 µm diameter) has recently been demonstrated by Lipson et al. at Cornell University [44], [45].”
Hybrid silicon and lithium niobate electro-optical ring modulator (2014, background): “Consequently, silicon optical modulators rely on alternative mechanisms such as the plasma dispersion effect to achieve electro-optical modulation [7,8].”
Ultra-compact silicon nanophotonic modulator with broadband response (2012, methodology): “Thus, resonator-based electro-optic modulators require painstaking fabrication tolerances of the high-Q cavity and are temperature-prone calling for sophisticated athermal designs and operation requirements [6] .”
Regenerative oscillation and four-wave mixing in graphene optoelectronics (2012, background): “frequency optoelectronics, and all-optical signal processing. Sub-wavelength nanostructures in monolithic material platforms have witnessed rapid advances towards chip-scale optoelectronic modulators [13, 14, 15, 16], photoreceivers [17, 18], and high-bitrate signal processing architectures [19, 20]”
High-throughput silicon nanophotonic wavelength-insensitive switch for on-chip optical networks (2008, background): “31" language="eng" publish="issue" relation="no" origsrc="yes"> Important successes in silicon nanophotonics have included the development of compact optical modulators based on high-quality-factor (high- Q ) microring resonator”
Excitonic switches operating at around 100 K (2009, result): “These data are consistent with earlier data on exciton lifetime t in AlAs/GaAs CQW: t reduces (1) at positive V as a result of approaching the direct regime, (2) at negative V because of the escape of electrons and holes from the CQW through the reduced barrier, and (3) at high temperatures as a res”