Ultra-compact silicon nanophotonic modulator with broadband response

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Ring Resonator Modulators in Silicon for Interchip Photonic Links (2013, unknown): “New electrooptic materials such as amorphous Si, indium tin oxide (ITO), or graphene may someday be incorporated into small Si ring resonators in a CMOS-compatible process.”
Indium-Tin-Oxide for High-performance Electro-optic Modulation (2015, methodology): “By reviewing material fundamentals and recent work in nanophotonics, we show that using ITO and nanophotonic field enhancement techniques produce the aforementioned high FOM devices as exemplified by the first λscale electro-optic modulators (EOM) [20].”
Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off (2015, background): “7 × 10(20) cm−3 has been achieved, although it is important to remember that these densities are achieved only within a few nanometers of the surface and not throughout the bulk of the material [26].”
Transparent conducting oxides for electro-optical plasmonic modulators (2015, methodology): “Theoretically, the modulating speed in TCOmodulators is limited only by the RC-circuit constrains, and it is expected to exceed hundreds of gigahertz [112, 143].”