Electrically Induced Optical Emission from a Carbon Nanotube FET

By J. Misewich, Richard Martel, Phaedon Avouris, J. Tsang, S. Heinze, J. Tersoff. Science, 2003

797 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/beca0cd5b8a0fddc9d256952ef8da0481ac55b72

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Phaedon Avouris
2. Mark S. Lundstrom
3. Jing Guo
4. Dmitri E. Nikonov
5. Michele Muccini
6. V. Perebeinos
7. Kaustav Banerjee
8. Navin Srivastava

In Biomedical Engineering

1. Mark S. Lundstrom
2. Chuan Xu
3. Jing Guo
4. Supriyo Datta
5. Hong Li
6. Kaustav Banerjee
7. Dmitri E. Nikonov
8. Danilo de Rossi

In Materials Chemistry

1. Hong Li
2. Phaedon Avouris
3. Kaustav Banerjee
4. Chuan Xu
5. Navin Srivastava
6. Zhihong Chen
7. Jing Guo
8. Mark S. Lundstrom

Citations in the corpus

• Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, background): “Carbon nanomaterials have extraordinary physical properties that make them exciting prospects for a variety of applications in microelectronics/nanoelectronics [6], [7], spintronics [8], [9], optics [10], as well as material science [11], mechanical [12] and biological fields [13], and even fundamen”
• Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors (2007, background): “CARBON nanotubes (CNTs) have recently attracted broad attention for future electron device applications because of their excellent electronic [1] and optical [2], [3] characteristics.”
• Electronic and transport properties of nanotubes (2007, background): “Misewich et al., 2003" or generated by impact excitation !”
• Carbon Nanotube Electronics and Optoelectronics (2004, background): “Experimentally, Misewich et al. have recently demonstrated that biasing a CNFET in the off-state indeed leads to the emission of polarized infra-red light [ 15 ].”