1.5-kV and 2.2-m (Omega ) -cm (^{2}) Vertical GaN Transistors on Bulk-GaN Substrates

By H. Nie, Q. Diduck, B. Alvarez, A. Edwards, B. Kayes, Ming Zhang, Gangfeng Ye, T. Prunty, D. Bour, I. Kizilyalli. 2014

197 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/b72a39acd9df0c557c1dadca8d5a3358925e63ac

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Tomás Palacios
2. Yuhao Zhang
3. Xiang Gao
4. Min-Chul Sun

In Electrical and Electronic Engineering

1. Tomás Palacios
2. Yuhao Zhang
3. Min-Chul Sun

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Tomás Palacios
3. Min-Chul Sun
4. Yuhao Zhang

Citations in the corpus

• High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017, background): “Some vertical GaN transistors have been demonstrated in the past few years, and they typically fall into two designs: current aperture vertical electron transistor (CAVET) ([13]–[15]) and trench MOSFET ( [16]–[20]).”