Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
By L. Goux, P. Czarnecki, Yangyin Chen, L. Pantisano, Xinpeng Wang, R. Degraeve, B. Govoreanu, M. Jurczak, D. Wouters, L. Altimime. 2010
220 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b6a8d1bc8fde299a151fb76d24714750cb80edea
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In Electrical and Electronic Engineering
Citations in the corpus
- Electronic properties of hafnium oxide: A contribution from defects and traps (2016, methodology): “Various high-κ dielectrics can be used as the functionalmedium in ReRAM cells: TiO2 [30], HfO2 [31], ZrO2 [32], Ta2O5 [33], SiO2 [34], GeO2 [35].”
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. (2011, background): “Previous reports on RRAM showed that the resistance-switching phenomenon was not possible under vacuu”
- Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices (2011, background): “, NiO [5]–[8], TiO2 [9]–[11], and HfO2 [12]–[20]), perovskite-type oxides [21]–[23], silicon oxides [24], [25], and even single-molecule systems [26].”