Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

By G. Katti, M. Stucchi, K. D. Meyer, Wim Dehaene. IEEE Transactions on Electron Devices, 2010

603 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ae6120193df24a4f7f222f91b9940717596533cd

How researchers see this paper

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In Electrical and Electronic Engineering

1. Hong Li
2. Chuan Xu
3. Kaustav Banerjee
4. Roberto Suaya
5. E. Li
6. Navin Srivastava

Citations in the corpus

• Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs (2010, methodology): “2The modeling of the MOS effect is simultaneously but independently developed in [3] and [14], based on the same physical concepts.”
• Progress Review of Electromagnetic Compatibility Analysis Technologies for Packages, Printed Circuit Boards, and Novel Interconnects (2010, methodology): “Other researchers proposed a physical-based equivalent-circuit model of dense TSVs, where the values of the RLCG in the equivalent circuit are obtained through analytical methods [91].”