Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
By M. Farahmand, C. Garetto, E. Bellotti, K. Brennan, M. Goano, E. Ghillino, Giovanni Ghione, J. Albrecht, P. Ruden. 2001
484 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/adfebc8db1fb77c0e3a7cab416b664d36e89d6af
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In Atomic and Molecular Physics, and Optics
- Nelson Tansu
- Hongping Zhao
- Jing Zhang
- Guangyu Liu
- R. Arif
- Stanislav Vitanov
- Rüdiger Quay
- Stephan Maroldt
In Condensed Matter Physics
- Hongping Zhao
- Nelson Tansu
- Guangyu Liu
- R. Arif
- Jing Zhang
- Stanislav Vitanov
- Rüdiger Quay
- Stephan Maroldt
In Electrical and Electronic Engineering
- Hongping Zhao
- R. Arif
- Stanislav Vitanov
- Rüdiger Quay
- Stephan Maroldt
- Vassil Palankovski
- Nelson Tansu
- Jing Zhang
Citations in the corpus
- Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, methodology): “K is used, which is obtained from [50].”
- High-temperature modeling of AlGaN/GaN HEMTs (2009, background): “Monte Carlo (MC) simulations by other groups [46,49] and experiments [50,51] for the electron mobility in bulk GaN as a function of the temperature are shown in Fig.”
- Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, unknown): “91e7 cm/s and vsatp = 1e6 cm/s, respectively, according to Monte Carlo fits [22], [24].”